Nanosheet channel-to-source and drain isolation

ABSTRACT

A method and structures are used to fabricate a nanosheet semiconductor device. Nanosheet fins including nanosheet stacks including alternating silicon (Si) layers and silicon germanium (SiGe) layers are formed on a substrate and etched to define a first end and a second end along a first axis between which each nanosheet fin extends parallel to every other nanosheet fin. The SiGe layers are undercut in the nanosheet stacks at the first end and the second end to form divots, and a dielectric is deposited in the divots. The SiGe layers between the Si layers are removed before forming source and drain regions of the nanosheet semiconductor device such that there are gaps between the Si layers of each nanosheet stack, and the dielectric anchors the Si layers. The gaps are filled with an oxide that is removed after removing the dummy gate and prior to forming the replacement gate.

DOMESTIC BENEFIT/NATIONAL STAGE INFORMATION

This application is a division of U.S. application Ser. No. 15/355,521filed Nov. 18, 2016 which claims the benefit of priority to U.S. Pat.No. 9,620,590 issued Apr. 11, 2017, the disclosures of both of which areincorporated herein by reference in their entirety.

BACKGROUND

The present invention relates to semiconductor device fabrication, andmore specifically, to nanosheet channel-to-source and drain isolation.

As semiconductor integrated circuits (ICs) or chips become smaller,stacked nanosheets, which are two-dimensional nanostructures with athickness range on the order of 1 to 100 nanometers, are increasinglyused. Nanosheets and nanowires are seen as a feasible device option for7 nanometer and beyond scaling of semiconductor devices. The generalprocess flow for nanosheet formation involves removing sacrificiallayers of silicon germanium (SiGe) between the silicon (Si) sheets.

SUMMARY

According to one or more embodiments of the present invention, a methodof fabricating a nanosheet semiconductor device includes formingnanosheet fins including nanosheet stacks including alternating silicon(Si) layers and silicon germanium (SiGe) layers on a substrate. Themethod further includes etching each nanosheet fin to define a first endand a second end along a first axis between which each nanosheet finextends parallel to every other nanosheet fin. The method furtherincludes undercutting the SiGe layers in the nanosheet stacks at thefirst end and the second end to form divots at the first end and thesecond end. Depositing a dielectric at the first end and the second endincludes depositing the dielectric in the divots at the first end andthe second end, and removing the SiGe layers between the Si layersleaves gaps between the Si layers of each nanosheet stack such that thedielectric anchors the Si layers at the first end and the second end.Removing the SiGe layers precedes forming source and drain regions ofthe nanosheet semiconductor device. The gaps are filled with an oxide toform second nanosheet stacks including alternating layers of the Si andthe oxide prior to forming a dummy gate above the nanosheet stacks. Themethod further includes removing the oxide after removal of the dummygate and prior to replacement with a replacement gate.

According to one or more embodiments, a structure used to fabricate ananosheet semiconductor device includes a substrate and two or more setsof silicon layers formed above the substrate. Each of the two or moresets of silicon layers is parallel to others of the two or more sets ofsilicon layers in a first direction, and each of the two or more sets ofsilicon layers includes gaps between the silicon layers of therespective set of silicon layers. The structure also includes adielectric material to anchor each of the two or more sets of siliconlayers at a first end and a second end along a second direction, whichis perpendicular to the first direction.

According to one or more embodiments, a structure used to fabricate ananosheet semiconductor device includes a substrate, and two or moresets of silicon layers formed above the substrate. Each of the two ormore sets of silicon layers is parallel to others of the two or moresets of silicon layers in a first direction and each of the two or moresets of silicon layers includes gaps between the silicon layers of therespective set of silicon layers. An inner spacer is in the gaps of thetwo or more sets of silicon layers at a first end and a second end alonga second direction, which is perpendicular to the first direction.

BRIEF DESCRIPTION OF THE DRAWINGS

The subject matter which is regarded as the invention is particularlypointed out and distinctly claimed in the claims at the conclusion ofthe specification. The forgoing and other features, and advantages ofthe invention are apparent from the following detailed description takenin conjunction with the accompanying drawings in which:

FIGS. 1-36 show the process flow of the fabrication of a FET withstacked nanosheets according to one or more embodiments, in which:

FIG. 1 shows a top view of the FET;

FIG. 2 shows a cross-sectional view of a nanosheet stack with a nitridehardmask;

FIG. 3 shows a different cross-sectional view of the intermediatestructures shown in FIG. 2;

FIG. 4 shows the result of depositing an oxide and a lithographic maskon the structure shown in FIGS. 2 and 3;

FIG. 5 shows the etch at the ends of each nanosheet;

FIG. 6 shows a cross-sectional view of the structure resulting fromperforming an isotropic etch on the structure shown in FIGS. 4 and 5;

FIG. 7 indicates divots in the nanosheet stack that result from theisotropic etch;

FIG. 8 depicts a cross-sectional view following a nitride backfill;

FIG. 9 shows a different cross-sectional view of the same structureshown in FIG. 8 and shows the divots filled with the nitride;

FIG. 10 is a cross-sectional view showing a fin reveal of the nanosheetfins;

FIG. 11 is a different cross-sectional view of the structure shown inFIG. 10;

FIG. 12 is a cross-sectional view of an intermediate structure thatresults from release of silicon germanium from the nanosheet stack;

FIG. 13 is a cross-sectional view that indicates anchoring of thesilicon layers of the nanosheet by the nitride fill;

FIG. 14 shows an intermediate structure that results from an oxide fill;

FIG. 15 shows a different cross-sectional view of the intermediatestructure shown in FIG. 14;

FIG. 16 is a cross-sectional view showing a result of recessing thehardmask and oxide layers;

FIG. 17 is a different cross-sectional view of the intermediatestructure shown in FIG. 16;

FIG. 18 shows the intermediate structure that results from removal ofthe hardmask;

FIG. 19 shows a cross-sectional view along a nanosheet of the sameintermediate structure shown in FIG. 18;

FIG. 20 shows the result of an anisotropic etch on the structure shownin FIGS. 18 and 19;

FIG. 21 is a cross-sectional view along a nanosheet of the sameintermediate structure shown in FIG. 20;

FIG. 22 is a cross-sectional view resulting from deposition of an extragate oxide;

FIG. 23 is a different cross-sectional view of the same intermediatestructure shown in FIG. 22;

FIG. 24 shows the result of removing the extra gate oxide and depositingoxide;

FIG. 25 is a cross-sectional view that shows the dummy gate stack formedabove the nanosheet stack;

FIG. 26 shows an intermediate structure resulting from recessing thenanosheets and oxide except under the dummy gate stack;

FIG. 27 is a cross-sectional view of the same structure and shows theresult of recessing the nanosheets to leave nanosheets only below thedummy gate stack;

FIG. 28 shows an intermediate structure that results from a repeateddeposition and etch of an inner spacer between the nanosheets;

FIG. 29 is a different cross-sectional view of the structure shown inFIG. 28 and shows the inner spacer below the dummy gate stack;

FIG. 30 is a resulting structure based on deposition of silicongermanium;

FIG. 31 is a different cross-sectional view of the structure shown inFIG. 30 and indicates the silicon germanium fill in gaps surrounding thenanosheets;

FIG. 32 shows the result of a nitride liner encapsulation and oxidedeposition;

FIG. 33 is a cross-sectional view of the same structure shown in FIG. 32and indicates that the dummy gate stack is removed;

FIG. 34 is a cross-sectional view of an intermediate structure thatresults from removal of the extra gate oxide above the nanosheets;

FIG. 35 is a different cross-sectional view of the same structure shownin FIG. 34; and

FIG. 36 is a cross-sectional view of a structure that results fromformation of a replacement gate above the nanosheets.

DETAILED DESCRIPTION

As previously noted, nanosheets are increasingly used in semiconductorchips. Known nanosheet fabrication processes include epitaxially growinga stack of alternating Si and SiGe layers on a silicon substrate andremoving the SiGe layers after forming spacers, forming the source anddrain regions, and removing the dummy gate. However, etching thesacrificial SiGe in the stack can result in an etch of the SiGe sourceand drain in pFET devices. This undesired etch of SiGe in the source anddrain regions leads to failure of the resulting transistors.Accordingly, a nanosheet fabrication process is needed that addressesthe SiGe etch in the source and drain regions.

Turning now to an overview of the present invention, one or moreembodiments provide fabrication methodologies and resulting structuresfor forming nanosheets. More specifically, one or more embodimentsdetailed herein include replacing the SiGe layers in the nanosheet stackwith an oxide. The nanosheets are interlocked mechanically with adielectric after the fin cut to anchor the nanosheets. After the firstfin reveal, the nanosheets are released and suspended with an oxidematrix, thereby eliminating the need to remove SiGe during the remainderof the nanosheet fabrication. The oxide matrix is removed selective tothe Si or SiGe channel, the source and drain, the dielectric spacer, andsilicon boron carbon nitrogen (SiBCN) inner spacers prior to thereplacement metal gate processing. The combination of the anchoring andoxide replacement of SiGe in the nanosheet stack avoids the issuespresented by etching of SiGe layers in the formation of the nanosheets.

Turning now to a more detailed description of one or more embodiments,FIGS. 1-36 show the process flow for fabrication of a FET 100 withstacked nanosheets 101. A silicon nitride (SiN) 110 cap is shown on thenanosheets 101. A gate 102 is also shown with the channel region belowobscured. Two cross-sections A-A, which is across the nanosheets 101,and B-B, which is along a nanosheet 101, are indicated. FIG. 2 shows across-sectional view along A-A of an intermediate structure used tofabricate the FET 100. FIG. 3 shows a cross-sectional view along B-B ofthe same intermediate structure shown in FIG. 2. A nanosheet stack 220is formed on a Si base 127 formed on a Si substrate 120 as a fin and canbe referred to as a nanosheet fin at this stage. The nanosheet stack 220includes Si layers 125 that ultimately form the nanosheets 101. These Silayers 125 are formed with alternating SiGe layers 210. SiN 110 isformed above each nanosheet stack 220 as a hardmask for fin patterningof the nanosheet stack 220. The known processes that are used tofabricate the intermediate structure shown in FIGS. 2 and 3 are notdetailed. These include alternating epitaxial growth of Si and SiGe anda reactive ion etch (RIE) process to form the multiple nanosheet stacks220 shown in FIG. 2 with trenches therebetween.

FIG. 4 shows a cross-sectional view along A-A, across the nanosheets101, of an intermediate structure that results from performing a shallowtrench isolation (STI) fill between the nanosheet stacks 220 and aprocess referred to below as a fin cut. An oxide 410 is used to fill thetrenches between the nanosheet fins, and a chemical mechanicalplanarization (CMP) process is used to remove the excess oxide 410. Theoxide 410 is silicon dioxide (SiO₂), for example. A lithographic mask420, which can include an organic planarizing layer, an anti-reflectivecoating (ARC) film, and photo resist, is deposited on the oxide 410. Thelithographic mask 420 can be applied in different layout configurationsaccording to alternate embodiments and can be applied in conjunctionwith an RIE process as needed in order to define the number of fins ofthe nanosheet stacks 220 and to define the length of the nanosheet fins.This process is referred to as a fin cut. The number and configurationof nanosheet fins in a device is defined by placing the lithographicmask 420 atop the nanosheet fins to be retained. For example, FIG. 4shows that all nanosheet fins are to remain because all the nanosheetfins have the lithographic mask 420 above. FIG. 5 shows across-sectional view along B-B, along a nanosheet 101, of theintermediate structure shown in FIG. 4. As FIG. 5 indicates, the edgesof the nanosheet stack 220 are etched to define the length of thenanosheet fin. The etching is performed though a RIE process, forexample.

FIG. 6 shows a cross-sectional view along A-A of an intermediatestructure that results from an isotropic etch of the structure shown inFIGS. 4 and 5. The only discernable difference in the structure,according to the cross-sectional view across the nanosheets 101 shown inFIG. 6, is removal of the lithographic mask 420. FIG. 7 shows thecross-sectional view along a nanosheet 101 (along B-B) of the sameintermediate structure shown in FIG. 6. The isotropic etch results inundercutting of the SiGe layer 210 in the nanosheet stack 220. Theundercutting results in the divots 710 shown in FIG. 7.

FIG. 8 shows a cross-sectional view along A-A. A SiN 110 backfill isperformed on the structure shown in FIGS. 6 and 7. The SiN 110 backfillsany cavity formed during the fin cut process, including cavities formedin the direction perpendicular to the nanosheet fins, in which are notvisible in FIG. 8. FIG. 9 shows the cross-sectional view along ananosheet 101 of the same structure shown in FIG. 8. The SiN 110 fill isin the regions 910 and the divots 710 shown in FIG. 7. The SiN 110 fillis followed by a CMP process.

FIG. 10 is a cross-sectional view along A-A (across the nanosheets 101)and shows the result of revealing the nanosheet stack 220 fins. Theoxide 410 is recessed to expose the fin nanosheets formed from thenanosheet stack 220 and the SiN 110 hardmask. FIG. 11 is across-sectional view along B-B of the same structure shown in FIG. 10and shows that the oxide 410 recess is selective to SiN 110. As acomparison of FIG. 11 with FIG. 9 indicates, the fin reveal does notresult in a discernable difference in the view along a nanosheet 101(i.e., along B-B).

FIG. 12 is a cross-sectional view across the nanosheets 101 (along A-A)that shows the release of SiGe layers 210 from the nanosheet stack 220using an isotropic dry or wet SiGe etch process that is selective to Si.FIG. 13 is a cross-sectional view along B-B of the same intermediatestructure as the one shown in FIG. 12. Based on the release of the SiGelayers 210, the alternating Si layers 125 in the nanosheet stack 220appear to be floating in FIG. 12. However, the view in FIG. 13 clarifiesthat the SiN 110 fill in the regions 910 and in the divots 710 acts asan anchor for the Si layers 125. This anchoring is a key part of theprocess flow that differentiates the one or more embodiments detailedherein with known nanosheet formation. The anchoring facilitatesreplacement of the SiGe layers 210 with an oxide matrix.

FIG. 14 is a cross-sectional view along A-A of an intermediate structurethat results from filling back the gaps between the nanosheet stacks 220with the oxide 410, as indicated by FIG. 12. FIG. 15 is across-sectional view along B-B of the same intermediate structure thatis shown in FIG. 14. As FIG. 15 indicates, the SiN 110 still fills thedivots 710 within the nanosheet stack 220 but the oxide 410 fills thegaps between Si layers 125. The oxide 410 deposition is followed by aCMP process. At this stage in the processing, the SiGe layers 210 in thenanosheet stack 220 (see e.g., FIG. 11) have been replaced by oxide 410and the source and drain regions are not yet formed. As a result,subsequent processing of the nanosheets 101 does not involve etching ofthe SiGe layers 210 and avoids the issue of SiGe being etched in thesource and drain regions as well as between the nanosheets.

FIG. 16 is a cross-sectional view along A-A of an intermediate structurethat results from a non-selective recess of the SiN 110 and oxide 410approaching the fin top. FIG. 17 is a cross-sectional view along B-B ofthe same intermediate structure that is shown in FIG. 16. The removal ofthe SiN 110 is indicated in FIG. 17, as well.

FIG. 18 is a cross-sectional view along A-A, across the nanosheets 101.FIG. 18 indicates the result of removing the SiN 110 hardmask above thenanosheet stack 220. The SiN 110 removal is selective and does notaffect the oxide 410. FIG. 19 shows a cross-sectional view along B-B andindicates the selective removal of SiN 110 on the ends of each nanosheetstack 220.

FIG. 20 shows a nanosheet reveal in a cross-sectional view along A-A. Ananisotropic etch such as an RIE process is used to etch the oxide 410between fins. This etch is not discernible in FIG. 21, which shows across-sectional view along B-B for the same intermediate structure thatis shown in FIG. 20.

FIG. 22 is a cross-sectional view along A-A of the intermediatestructure that results from depositing an extra gate (EG) oxide 2210conformally on the nanosheet stack 220 and the oxide 410 between fins.FIG. 23 is a cross-sectional view along B-B and indicates that the EGoxide 2210 is conformally deposited along the length of each nanosheetstack 220. At this stage, gate patterning is performed.

FIG. 24 shows the result of removing the EG oxide 2210 and depositingoxide 410 in a cross-sectional view along A-A. A CMP process isperformed to remove excess oxide 410. FIG. 25 shows the intermediatestructure shown in FIG. 24 but along B-B. FIG. 25 shows the formation ofa dummy gate stack 2500 above a nanosheet stack 220. The EG oxide 2210is retained at the interface between the dummy gate stack 2500 andnanosheet stack 220 underneath. The dummy gate stack 2500 includes thedummy gate 2520, which is formed from Si, the gate hardmask 2530 andgate oxide hardmask 2540, which can be a single layer or dual layerdielectric that can include SiN and Si oxide according to an exemplaryembodiment. Spacers 2510 comprised of a low-k dielectric are formedaccording to known processes. The low-k spacers 2510 can include siliconboron carbon nitride (SiBCN), silicon oxycarbonitride (SiOCN), orsilicon oxynitride (SiON), for example.

FIG. 26 is a cross-sectional view along A-A, which shows the result ofrecessing the nanosheet stacks 220. The recessing is achieved by an RIEprocess, and both the oxide 410 and portions of the Si layers 125 areremoved. FIG. 27 shows a cross-sectional view along B-B for the sameintermediate structure shown in FIG. 26. The view shown in FIG. 27indicates that the nanosheet stack 220 is retained only below the dummygate stack 2500. The SiN 110 that acted as an anchor (FIG. 13) for thealternating Si layers 125 of the nanosheet stack 220 is retained. Thedivots 2710 under the spacers 2510 and spaces 2720 in the SiN 110 areformed by an isotropic etch.

FIG. 28 is a cross-sectional view along A-A of an intermediate structurethat results from a repeated deposition and etch of an inner spacer2910. As a comparison of FIGS. 26 and 28 indicates, no difference isdiscernible in the cross-sectional view across nanosheets 101. FIG. 29is a cross-sectional view along B-B. As FIG. 29 indicates, thedeposition and etch of the inner spacer 2910 results in the inner spacer2910 filling the divots 2710 and spaces 2720 shown in FIG. 27. The innerspacer 2910 can be SiN or a low-k spacer such as SiBCN, SiOCN, or SiONaccording to exemplary embodiments.

FIG. 30 is a cross-sectional view along A-A, which shows SiGe 3010epitaxially grown on the Si base 127 and over the oxide 410 of theintermediate structure shown in FIG. 28. This SiGe 3010 forms the sourceand drain regions. FIG. 31 shows a cross-sectional view along B-B forthe same intermediate structure shown in FIG. 30. As FIG. 31 indicates,the SiGe 3010 growth fills the gaps, shown in FIG. 29, that are left bythe removal of the nanosheet stack 220 everywhere except under the dummygate stack 2500. The formation of the source and drain regions afterremoval of the SiGe layers 210 from between the nanosheet stacks 220 (asdiscussed with reference to FIGS. 12 and 13 avoids the previouslydiscussed issues of undesired etch of SiGe 3010 during removal ofsacrificial SiGe layers 210.

FIG. 32 is a cross-sectional view of an intermediate structure alongA-A. The intermediate structure shown in FIG. 32 results from severalknown processes involved in the removal of the dummy gate stack 2500.SiN 110 is deposited over the SiGe 3010 layer in a process referred toas a nitride liner encapsulation. An oxide 3210 is deposited as aninter-layer dielectric (ILD) over the SiN 110. This ILD oxide 3210 canbe the same material as the oxide 410 according to exemplaryembodiments. FIG. 33 is a cross-sectional view along B-B of the samestructure shown in FIG. 32. The SiN 110 nitride liner encapsulation isshown, as well as the deposition of the ILD (SiN 110) followed by a CMPprocess. In alternate embodiments, the nitride liner encapsulation canbe achieved by a different nitride that acts as an oxidation barrier.The dummy gate stack 2500 is removed, revealing the EG oxide 2210 at thebase of the dummy gate stack 2500, between the spacers 2510.

FIG. 34 is a cross-sectional view along A-A of an intermediate structurethat results from processing of the structure shown in FIGS. 32 and 33.The results of the processing are not discernible in the view shownacross nanosheets 101 in FIG. 34. FIG. 35 shows a cross-sectional viewof the same intermediate structure as the one shown in FIG. 34. As FIG.35 indicates, the EG oxide 2210 between the spacers 2510 is removed andthe oxide 410 between the Si layers 125 of the nanosheet stack 220 arealso removed. This leaves an opening 3510 above the Si layers 125. AsFIG. 33 indicates, oxide 410, rather than the SiGe layers 210, separatesthe Si layers 125 that make up the nanosheets 101. As previouslydiscussed, the issue of etching the SiGe layers 210 from between thenanosheet stack 220, without affecting SiGe 3010 in the source and drainregions, is avoided entirely according to the one or more embodiments.Removing the oxide 410, via an isotropic etch, is more selective thanremoving SiGe.

FIG. 36 shows the structure that results from formation of the gate3600. A high-k dielectric and work function metal 3610 are used toconformally line the opening 3510 and to fill the gaps between Si layers125 below the gate 3600. A gate metal 3620 is deposited to fill theopening 3510 followed by a CMP process to remove excess gate metal 3620.The FET 100 that results from the processes shown in FIGS. 1-36 andadditional known processes differs from a nanosheet device that isfabricated according to known processes, because the source and drainregions are not compromised due to removal of the SiGe layers 210between the nanosheets after the formation of the source and drainregions.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, element components,and/or groups thereof.

Various embodiments of the present invention are described herein withreference to the related drawings. Alternative embodiments can bedevised without departing from the scope of this invention. It is notedthat various connections and positional relationships (e.g., over,below, adjacent, etc.) are set forth between elements in the followingdescription and in the drawings. These connections and/or positionalrelationships, unless specified otherwise, can be direct or indirect,and the present invention is not intended to be limiting in thisrespect. Accordingly, a coupling of entities can refer to either adirect or an indirect coupling, and a positional relationship betweenentities can be a direct or indirect positional relationship. As anexample of an indirect positional relationship, references in thepresent description to forming layer “A” over layer “B” includesituations in which one or more intermediate layers (e.g., layer “C”) isbetween layer “A” and layer “B” as long as the relevant characteristicsand functionalities of layer “A” and layer “B” are not substantiallychanged by the intermediate layer(s).

The following definitions and abbreviations are to be used for theinterpretation of the claims and the specification. As used herein, theterms “comprises,” “comprising,” “includes,” “including,” “has,”“having,” “contains” or “containing,” or any other variation thereof,are intended to cover a non-exclusive inclusion. For example, acomposition, a mixture, process, method, article, or apparatus thatcomprises a list of elements is not necessarily limited to only thoseelements but can include other elements not expressly listed or inherentto such composition, mixture, process, method, article, or apparatus.

Additionally, the term “exemplary” is used herein to mean “serving as anexample, instance or illustration.” Any embodiment or design describedherein as “exemplary” is not necessarily to be construed as preferred oradvantageous over other embodiments or designs. The terms “at least one”and “one or more” can include any integer number greater than or equalto one, i.e. one, two, three, four, etc. The terms “a plurality” caninclude any integer number greater than or equal to two, i.e. two,three, four, five, etc. The term “connection” can include both anindirect “connection” and a direct “connection.”

For the sake of brevity, conventional techniques related tosemiconductor device and IC fabrication may or may not be described indetail herein. Moreover, the various tasks and process steps describedherein can be incorporated into a more comprehensive procedure orprocess having additional steps or functionality not described in detailherein. In particular, various steps in the manufacture of semiconductordevices and semiconductor-based ICs are well known and so, in theinterest of brevity, many conventional steps will only be mentionedbriefly herein or will be omitted entirely without providing thewell-known process details.

The corresponding structures, materials, acts, and equivalents of allmeans or step plus function elements in the claims below are intended toinclude any structure, material, or act for performing the function incombination with other claimed elements as specifically claimed. Thedescription of the present invention has been presented for purposes ofillustration and description, but is not intended to be exhaustive orlimited to the invention in the form described herein. Manymodifications and variations will be apparent to those of ordinary skillin the art without departing from the scope and spirit of the invention.The embodiment was chosen and described in order to best explain theprinciples of the invention and the practical application, and to enableothers of ordinary skill in the art to understand the invention forvarious embodiments with various modifications as are suited to theparticular use contemplated.

The flow diagrams depicted herein are just one example. There can bemany variations to this diagram or the steps (or operations) describedtherein without departing from the spirit of the invention. Forinstance, the steps can be performed in a differing order or steps canbe added, deleted or modified. All of these variations are considered apart of the claimed invention.

While the preferred embodiment to the invention had been described, itwill be understood that those skilled in the art, both now and in thefuture, can make various improvements and enhancements which fall withinthe scope of the claims which follow. These claims should be construedto maintain the proper protection for the invention first described.

The descriptions of the various embodiments of the present inventionhave been presented for purposes of illustration, but are not intendedto be exhaustive or limited to the embodiments described. Manymodifications and variations will be apparent to those of ordinary skillin the art without departing from the scope and spirit of the describedembodiments. The terminology used herein was chosen to best explain theprinciples of the embodiments, the practical application or technicalimprovement over technologies found in the marketplace, or to enableothers of ordinary skill in the art to understand the embodimentsdescribed herein.

What is claimed is:
 1. A structure used to fabricate a nanosheet semiconductor device, the structure comprising: a substrate; a set of silicon layers formed above the substrate, wherein the silicon layers of the set of silicon layers are parallel to each other and include gaps between adjacent ones of the silicon layers of the set of silicon layers, wherein each of the gaps defines a region that is parallel to the silicon layers of the set of silicon layers and extends from a first end to a second end of each of the adjacent ones of the silicon layers of the set of silicon layers; an inner spacer at the first end and at the second end of each of the gaps between the adjacent ones of the silicon layers of the set of silicon layers; and an oxide between the first end and the second end in each of the gaps between the adjacent ones of the silicon layers of the set of silicon layers.
 2. The structure according to claim 1, wherein the inner spacer includes silicon nitride (SiN).
 3. The structure according to claim 1, wherein the inner spacer is a low-k spacer.
 4. The structure according to claim 3, wherein the low-k spacer includes silicon boron carbon nitride (SiBCN).
 5. The structure according to claim 3, wherein the low-k spacer includes silicon oxycarbonitride (SiOCN).
 6. The structure according to claim 3, wherein the low-k spacer includes silicon oxynitride (SiON).
 7. The structure according to claim 1, further comprising doped silicon germanium adjacent to each side of the set of silicon layers and to the first end and the second end of each of the gaps between the adjacent ones of the silicon layers of the set of silicon layers.
 8. The structure according to claim 7, wherein the doped silicon germanium is a source or a drain.
 9. The structure according to claim 7, further comprising additional ones of the inner spacers adjacent to and opposite a side of the doped silicon germanium that is adjacent to the set of silicon layers.
 10. The structure according to claim 7, further comprising silicon nitride (SiN) adjacent to and above the doped silicon germanium.
 11. The structure according to claim 10, further comprising an oxide layer above the SiN.
 12. The structure according to claim 11, wherein the oxide is an interlayer dielectric. 